Summary
Massive multiple‐input, multiple‐output (MIMO) system is an effective technique to develop the spectral efficiency of the wireless communication systems. Since the number of users is much higher than the available number of orthogonal pilot sequences, the users in the neighboring cells can reuse the same pilots of the home cell. Thus, pilot contamination occurs, which restricts the system throughput. In this paper, Laplacian centralized scattering‐spatially correlated Rayleigh fading channel model with multi‐cell minimum mean square error (M‐MMSE) combining and precoding to mitigate pilot contamination and enhance cell throughput. This model gives a more accurate description, especially for cell‐edge users. It results in an accurate spatial channel correlation matrix calculation that enhances the channel estimation quality under pilot contamination. Simulation results indicate that the proposed Laplacian scattering‐spatially correlated Rayleigh fading model achieves better pilot contamination mitigation and larger spectral efficiency, as compared with both the one‐ring scattering‐spatially correlated Rayleigh fading and the uncorrelated Rayleigh fading channel models for different combining and precoding schemes at different pilot reuse factors. The cost of interference rejection and spectral efficiency enhancement is an increase in the system computational complexity.
With the expansion of renewable energy sources worldwide, the need for developing more economical and more efficient converters that can operate on a high frequency with minimal switching and conduction losses has been increased. In power electronic converters, achieving high efficiency is one of the most challenging targets to achieve. The utilization of wideband switches can achieve this goal but add additional cost to the system. LLC resonant converters are widely used in different applications of renewable energy systems, i.e., PV, wind, hydro and geothermal, etc. This type of converter has more benefits than the other converters such as high electrical isolation, high power density, low EMI, and high efficiency. In this paper, a comparison between silicon carbide (SiC) MOSFET and silicon (Si) MOSFET switches was made, by considering a 3KW half-bridge LLC converter with a wide range of input voltage. The switching losses and conduction losses were analyzed through mathematical calculations, and their authenticity was validated with the help of software simulations in PSIM. The results show that silicon carbide (SiC) MOSFETs can work more efficiently, as compared with silicon (Si) MOSFETs in high-frequency power applications. However, in low-voltage and low-power applications, Si MOSFETs are still preferable due to their low-cost advantage.
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