The cyclic voltammetry stripping (CVs) behavior of the tin-doped indium oxide (ITO) on SiO2 in 0.3M HCl is reported. The CVs result showed an obvious reduction-current peak that occurred during the first cathodic potential scanning. Smaller reduction current and more negative potential of the reduction-current peak were also observed for the ITO that was annealed at 500 °C. The result was attributed to the replenished oxygen-deficient site and the oxygen anion density is decreased in the ITO. The present study has proved that CVs is a useful method to differentiate the carrier concentration in ITO film controlled by different pretreatments. Many spherical In-Sn particles were formed on the ITO when the reduction current took place. During precipitation of these spherical particles, the grain boundaries of the ITO were dissolved and the ITO surface nearby the grain boundaries offered a preferred nucleation site for the formation of these spherical In-Sn particles. Based on the microstructure observed and the result derived from the short potential range scanning, the formation mechanism of the spherical particle is proposed.
Eu 3+ -Doped CdMoO 4 Red Phosphor Synthesized Through an Aqueous Solution Route at Room Temperature. -The title phosphor is synthesized by precipitation from aqueous solutions of CdCl2, Eu(NO3)3, Na2MoO4, and NaCl at room temperature. The samples are characterized by XRD, SEM, TEM, and fluorescence spectroscopy. The phosphor exhibits dominant red emission at 617 nm at room temperature under 300 nm excitation. The red emission is visible to the naked eye, indicating that CdMoO 4 is a new promising host material for rare-earth elements. This may lead to the generation of rare-earth element doped complex metal oxides with low cost and gram scale production. -(WANG, W. S.; ZHEN*, L.; XU, C. Y.; SHAO, W. Z.; CHEN, Z. L.; J. Alloys Compd. 529 (2012) 17-20, http://dx.
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