Received8August 1994, in final form and acceptedforpublication27February1995 Absiract. Resuits are presented which demonstraie ine existence of unambiguous three-dimensional quantum confinement of phonons within crystallites of the Il-VI semiconductor CdSe, which were prepared by t h e method of diffusive growth within a doped glassmatrix.Theconfinement was investigated by meansof Ramanscattering from zone centre longitudinal optical (LO) phonons. These Raman spectra illustrate LO phonon peaks showing a low-energy shifl and broadening with decreasing crystallite size. The experimental measurements are compared with a theoretical model of phonon confinement which includes a size distribution parameter. The experimental results are in good agreement with the predictions of this model. Surface vibrational modes and the effects of hydrostatic pressure from t h e glass matrix do not appear to be of significance i n the samples investigated.
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