ZTO/GZO double layered films were prepared on unheated non-alkali glass substrates. ZTO films were deposited by RF/DC hybrid magnetron co-sputtering using ZnO (RF) target and SnO 2 (DC) targets, and then GZO films were deposited by DC magnetron sputtering using an GZO (Ga 2 O 3 :5.57 wt%) target. These films were post-annealed at temperature of 200, 300 o C in air and vacuum ambient for 30 min. In the case of post-annealing in air, ZTO/GZO double layer showed relatively low resistivity change, compared to GZO single layer. Furthermore, ZTO/GZO double layer revealed low WVTR, compared to GZO single layer. Therefore, it can be confirmed that ZTO film doing a role with barrier for water or oxygen diffusion.
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