This paper presents results of the analysis of organic coffee beans cultivated in Departamento del Cauca -Colombia. Beans studied are of the Coffea Arabica species cultivated in mountain soils of altitude close to 1500 m. Samples from green and roasted beans were characterized using differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), and X-ray diffractometry (XRD). We intend to relate the features of the heating spectra with the transformation experimented by the coffee. Glass transition and phase transitions were examined. DSC and TGA spectra show that the green coffee experiments a high and fast decomposition after 200°C until 289°C with a remarkable transformation in a close range around 210°C. XRD shows significant changes for green and roasted beans associated to the amount of caffeine hydrates and caffeine anhydrous. Fit of XRD curves by Lorentzian shows a considerable increase of the active crystalline phase at 2θ equal to 20.4 0 for the roasted coffee. The results obtained from this study contribute to the insight associated with the final quality of coffee dependent on roasting methods. Better quality of coffee requires a refined and very controlled roasting process around of 218°C with a slow thermal treatment since the room temperature until the 200°C.
Scanning tunneling microscopy (STM) has been used to obtain images and current–voltage (I–V) curves of carbon nanotubes produced by arc discharge of carbon electrodes. The STM I–V curves indicate that carbon nanotubes with diameters from 2.0 to 5.1 nm have a metallic density of states. Using STM, we also observe nanometer-size graphene sheets which are four graphite layers thick. The STM images of carbon nanotubes are in good agreement with transmission electron microscope images.
Scanning tunneling microscopy has been used to characterize the electronic structure and surface morphology of diamond films grown using the hot filament and microwave plasma chemical vapor deposition techniques. We observe a significant difference between the current-voltage (I-V) curves for the two types of films. The I-V curves for the hot-filament grown films are characterized by a well-defined zero-current region from which a surface band gap of 4.1 eV is measured. The 1-V curves for the microwave plasma grown films exhibit a rectifying behavior which can be modeled by surface band bending. We compare the surface density of states obtained from the 1-V curves with those obtained from x-ray photoelectron and appearance potential spectroscopies.
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