Using terahertz time-domain spectroscopy, we measured the complex conductivity and dielectric function of n-type GaN with various carrier concentrations on sapphire substrate. The measured complex conductivity, which is due to the free carriers, is well fitted by simple Drude model. The contribution from the lattice vibration to the complex dielectric function increases with the decrease in free carrier concentration. A better fitting of the frequency-dependent complex dielectric response was obtained by considering both of the Drude and the classical damped oscillator model.
In this work, we show an obvious evidence of nondestructive Raman spectra for the structural transition, i.e., the existence of a charge density wave (CDW) in monolayer 2H-TaS2, which can exhibit a much higher transition temperature than bulk and results in additional vibrational modes, indicating strong interactions with light. Furthermore, we reveal that the degenerate breath and wiggle modes of 2H-TaS2 originated from the periodic lattice distortion can be probed using the optical methods. Since recently several light-tunable devices have been proposed based on the CDW phase transition of 1 T-TaS2, our study and in particular, the theoretical results will be very helpful for understanding and designing electronic devices based on the CDW of 2H-TaS2.
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