Nitrogen doping-induced changes in the electrical conduction
of
anatase TiO1‑x
N
x
(x ≤ 0.12) thin films were investigated
by combining electrical measurement with structural characterization.
The Hall effect data indicate that when the doping level reaches 4
at.%, the O substitution with N results in a p-type conduction, in
spite of the self-compensation effect, and the Hall mobility of holes
is more than 20 cm2/(V s). On the basis of the experimental
results from X-ray diffraction, X-ray photoemission spectroscopy,
and temperature-resistance relationship, a mechanism involving hopping
conduction and band conduction is proposed to interpret the transport
behavior of carriers. In addition, the origin of the p-type based
on the structural character of the film will also be discussed.
Developing efficient electrocatalyst for CO2 reduction to syngas with tunable H2/CO ratios and high total Faradic efficiency is challenging. Herein, we report an effective catalyst composed of in-situ reconstructed AgZn3...
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.