We have fabricated polysilicon thin film transistors (TFTs) using sputtered HfO 2 gate dielectric and SiGe as source/drain. The polysilicon film is formed by low temperature furnace recrystallization of amorphous silicon. The effective dielectric constant of the HfO 2 in the TFTs is 17.7, and the transconductance of the TFTs is about 4.5 times that of those using SiO 2 as gate dielectric. The use of SiGe as source/drain requires a lower thermal budget than the conventional technique of impurity implantation in the polysilicon film.
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