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The authors have studied the effects of Fe doping at the interface between GaN epitaxial layers for heterostructure field-effect transistors grown by metal-organic chemical vapor deposition and the corresponding impact on the device characteristics. The epitaxial structures were grown with different Fe-doped GaN layers at the layer-template interface. Analysis of the measured electron and interface charge distributions in the heterostructures demonstrated the important role of Fe doping at the regrowth interface. No charge at the regrowth interface was observed in transistor structures with a thick Fe-doped layer. Characterization of the electrical properties of the transistor structures revealed the presence of high sheet carrier concentrations and improved mobilities with increasing thickness of the Fe-doped GaN layer at the regrowth interface.

We demonstrate the control of the quantum-confined Stark effect in InGaN∕GaN quantum wells (QWs), grown along the [0001] direction as part of the active region of visible light emitting diodes (LEDs). The effect can be altered by modifying the strain applied to the active region by the hole injection and contact layers. The optical characteristics and electrostatic potentials of the active region of the visible LEDs with different p-type layers are compared. LEDs with p-InGaN on top of the active region show a reduced blueshift in the peak wavelength with increasing injection current and a lower potential difference across the QW than those with p-GaN layers. The electrostatic potentials across the QW have estimated average values of ∼0.8 and ∼1.3MV∕cm for the active region of LEDs of current study with p-InGaN and p-GaN layers, respectively.

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