A study is made of an electrostatic method of focusing an electron beam in a traveling wave tube in which the beam traverses a slalom-like orbit between the wires of the slow wave structure. The requisite field is produced by a row of equally spaced wires at the same potential placed midway between two parallel plates at another potential.
The equations of motion are solved to find initial conditions for stable orbits. Space charge effects are considered.
A large slalom tester was built to compare experimental and theoretical results. The agreement between the computed and measured current transmitted is surprisingly close. There is also good agreement between the measured and computed beam perveance.
In this paper we describe the active devices and passive components used in the SG undersea cable system for the TAT-6 link between Green Hill, Rhode Island, and St. Hilaire de Riez, France. We explain reasons for component choice and present information about design, perfor mance, screening, and reliability.
I. I N T R O D U C T I O NTraditionally, in high-reliability communication systems such as undersea telephone cables, well-established c o m p o n e n t a n d device d e signs a n d manufacturing processes are used. B u t with t h e development of the SG undersea cable system, this conservative a p p r o a c h has been challenged by t h e need for devices of higher performance. T h i s re q u i r e m e n t resulted, in some cases, in sophisticated device designs t h a t border on "state-of-the-art" concepts. For example, t h e increase in channel capacity or b a n d w i d t h requires high-frequency transistors in corporating design a n d processing features t h a t are relatively new. Nevertheless, new features were carefully evaluated so t h a t t h e y would meet t h e system reliability r e q u i r e m e n t s . In general, reliability is t h e governing criterion for t h e selection of c o m p o n e n t s a n d devices for t h e undersea cable system. T h i s concept a n d how it applies to passive components and active devices are covered in t h e following subsections: II, transistors; III, diodes; IV, gas tubes; V, resistors; VI, capacitors; a n d VII, inductors a n d transformers. E a c h subsection is complete for each component or device and covers: (t) choice and requirements, (ii) design a n d construction, (Hi) characterization a n d screening, a n d (iv) aging.
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