High power light emitting diodes (LEDs) continue to increase in output flux with the best III‐nitride based devices today emitting over 150 lm of white, cyan, or green light. The key design features of such products will be covered with special emphasis on power packaging, flip‐chip device design, and phosphor coating technology. The high‐flux performance of these devices is enabling many new applications for LEDs. Two of the most interesting of these applications are LCD display backlighting and vehicle forward lighting. The advantages of LEDs over competing lighting technologies will be covered in detail.

Vertically injected thin-film ultraviolet light-emitting diodes operating at 325 and 280nm are demonstrated. Low-temperature AlN interlayers allow crack-free growth of AlxGa1−xN with compositions up to x=0.53 on GaN-on-sapphire templates. The GaN layer allows laser-induced separation of the highly strained epi stack from the sapphire substrate with high yield. Cathode contacts are formed on nitrogen-face AlxGa1−xN (up to x=0.53) and allow vertical injection of current into the active region. Controlled roughening of the nitrogen-face AlxGa1−xN is also demonstrated through photoelectrochemical etching and results in >2.5× light extraction gain for 325 and 280nm devices.

Six bands have been observed in the magnetic rotation spectrum of acrolein at 4040, 4069, 4122, 4178, 4220, and 4322 Å. The first five bands are assigned to the 3A″–1A′ (π*–n) transition of trans acrolein with the 0–0 band at 4122 Å. The sixth band at 4322 Å is assigned as the 0–0 band of the 3A″–1A′ (π*–n) transition of the cis (or gauche) isomer. The 3A″ state of the cis (or gauche) isomer lies below the corresponding state of the trans isomer by a similar interval to that found earlier for the 1A″ (π*–n) states. The reverse situation exists for the ground states.The absorption spectrum has also been reinvestigated using up to 30 m atm of gas in a cell heated to 180 °C. New assignments are given for some of the bands.

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We have investigated the P2~'P& and P&~Po atomic fine-structure transitions in isotopically enriched samples of oxygen by means of tunable far-infrared spectroscopy. Accurate frequency measurements (a few parts in 10') were made for all three stable isotopes and the ' 0 hyperfine structure was resolved. The experimental values for the isotopic shift of "0 relative to ' 0 for the J =2~J =1 and J = 1~J =0 fine-structure transitions are in agreement with theoretical calculations.PACS number(s): 32.30.Bv