High-quality ZnS, ZnSe, and ZnTe epitaxial films were grown on ͑001͒-GaAs-substrates by molecular beam epitaxy. The 1s-exciton peak energy positions have been determined by absorption measurements from 2 K up to about room temperature. For ZnS and ZnSe additional high-temperature 1s-exciton energy data were obtained by reflectance measurements performed from 300 up to about 550 K. These complete E 1s (T) data sets are fitted using a recently developed analytical model. The high-temperature slopes of the individual E 1s (T) curves and the effective phonon temperatures of ZnS, ZnSe, and ZnTe are found to scale almost linearly with the corresponding zero-temperature energy gaps and the Debye temperatures, respectively. Various ad hoc formulas of Varshni type, which have been invoked in recent articles for numerical simulations of restricted E 1s (T) data sets for cubic ZnS, are discussed.
We report on reflected high-energy electron-diffraction and transmission electron microscopy plane-view investigation of the dislocation structure in doped and undoped ZnSe/GaAs(001) grown by molecular-beam epitaxy and metal-organic vapor-phase epitaxy. The thicknesses of the investigated layers vary between 60 and 900 nm. Several stages of dislocation formation are found which occur at distinct layer thicknesses. Frank partial dislocations (up to 500 nm), Shockley partial dislocations (between 130 and 400 nm) with a maximum density at 300 nm, and perfect 60° dislocations (above 300 nm) are observed in samples with perfectly smooth surface. The formation of Shockley partial dislocations is strongly anisotropic which might be due to the higher mobility of α-type dislocations. An increased roughness of the growing surface yields a suppression of Shockley partial dislocations and an irregular dislocation network with dislocations inclined to the 〈110〉 directions. A regular dislocation network with straight dislocations is found in Cl-doped samples.
Transmission electron microscopy (TEM) investigations of metal organic vapor phase deposition grown AlxGa1−xN/GaN heterostructures on Si(111) containing an AlN high-temperature buffer layer have been carried out. The structural properties at the interface and in the epilayer as well as the electronic properties suitable for a high electron mobility transistor (HEMT) were analyzed and compared with systems grown on Al2O3(0001). High resolution TEM (HRTEM) at the AlN/Si(111) interface reveals a 1.5–2.7 nm thick amorphous SiNx layer due to the high growth temperature of TAlN=1040 °C. Therefore, a grain-like GaN/AlN region extending 40–60 nm appears and it is subsequently overgrown with (0001) orientated GaN material because of geometrical selection. The residual strain at the AlN/Si(111) interface is estimated to be εr=0.3±0.6% by Fourier filtering of HRTEM images and a moiré fringe analysis. This indicates almost complete relaxation of the large mismatch f(AlN/Si)=+23.4% which seems to be supported by the SiNx layer. Weak beam imaging and plan view TEM show typical threading dislocations in the epilayer with a density of 3×109 cm−2 extending along 〈0001〉 which sometimes form grain boundaries. An AlxGa1−xN/GaN interface roughness of 3 monolayers is estimated and a small AlxGa1−xN surface roughness of 1.5 nm is obtained by HRTEM and atomic force microscopy investigations which correspond to two-dimensional growth. C–V and Hall measurements reveal two-dimensional electron gas at the Al32Ga68N/GaN interface that has a sheet carrier concentration of 4×1012 cm−2. The electron mobility of 820 cm2/Vs measured at room temperature is applicable for a HEMT grown on Si(111).
Highly conductive polycrystalline ZnO films have been grown by metal organic chemical vapour deposition (MOCVD) using dimethylzinc (DMZn), dimethylzinc-triethylamine (DMZn-TEN) and tertiary butanol (tBuOH) as precursors. When (DMZn-TEN) is used the efficiency of the zinc precursors is reduced by the formation of gas-phase adducts. Films grown by DMZn-TEN are oriented with the c axis in the growth direction. The films are transparent. Specific resistivities as low as 3 × 10 −4 cm and Hall mobilities up to 60 cm 2 (V s) −1 have been achieved in n-doped films where n-butylchloride and triethylgallium have been used as dopant sources.
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