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Key words. Energy dispersive X-ray spectroscopy nanoanalysis, high-angular annular dark field scanning transmission electron microscopy, high-resolution transmission electron microscopy, InGaN-based light emitting diode, laser diode, multiple quantum wells, three-dimensional quantum dots. SummaryThe mechanism of high emission of InGaN-based multiple quantum wells, which exhibit exceptionally high light emission efficiency despite their high defect density, is still not fully understood. Here, we deal with this problem, showing the details of structure and formation of V defects in the multiple quantum wells and reviewing interpretations proposed so far. Then, we show a structural investigation of three-dimensional high-density quantum dots, fabricated instead of quantum wells in the active layer. The shape and size of the InGaN quantum dots and the SiN x masks for the growth of the dots have been revealed using high-angle annular dark field scanning transmission electron microscopy, energy dispersive X-ray spectroscopy nanoanalysis and highresolution transmission electron microscopy.