In spin-based electronics, information is encoded by the spin state of electron bunches 1,2,3,4 . Processing this information requires the controlled transport of spin angular momentum through a solid 5,6 , preferably at frequencies reaching the so far unexplored terahertz (THz) regime 7,8,9 . Here, we demonstrate, by experiment and theory, that the temporal shape of femtosecond spin-current bursts can be manipulated by using specifically designed magnetic heterostructures. A laser pulse is employed to drive spins 10,11,12 from a ferromagnetic Fe thin film into a nonmagnetic cap layer that has either low (Ru) or high (Au) electron mobility. The resulting transient spin current is detected by means of an ultrafast, contactless amperemeter 13 based on the inverse spin Hall effect 14,15 that converts the spin flow into a THz electromagnetic pulse. We find that the Ru cap layer yields a considerably longer spin-current pulse because electrons are injected in Ru d states that have a much smaller mobility than Au sp states 16 . Thus, spin current pulses and the resulting THz transients can be shaped by tailoring magnetic heterostructures, which opens the door for engineering high-speed spintronic devices as well as broadband THz emitters 7,8,9 , in particular covering the elusive range from 5 to 10THz.Contemporary electronics is based on the electron charge as information carrier whose presence or absence encodes the value of a bit. Much more efficient devices for low-power data storage and processing could be realized if the spin degree of freedom were used in addition 1,2,3,4 . The spintronics approach requires the generation and control of spin currents, that is, the transport of spin angular momentum through space 5,6 . Spintronic operations should be performed at a pace exceeding that of today's computers, which ultimately requires the generation of spin current pulses with terahertz (1 THz = 10 12 Hz) bandwidths 7,8 as well as the possibility to manipulate them in novel structures 17,18 . To date, femtosecond spin-current pulses have been successfully launched by optically exciting electrons in semiconductors 10 or ferromagnetic metals 11,12 . However, to enable ultrafast basic operations on these transients (such as buffering or delaying), their shape and propagation have to be controlled on subpicosecond time scales.Here, we employ magnetic heterostructures containing an optimally chosen nonmagnetic metallic layer whose electron mobility allows us either to trap or to transmit electrons and, thus, to engineer ultrafast spin pulses. The spin flow is probed in a contactless manner using the inverse spin Hall effect 14,15 (ISHE) that converts the spin current into a detectable THz electromagnetic pulse 13 . Our findings open up a route to device-oriented femtosecond spintronics as well as novel broadband emitters of THz radiation 7,8,9 .Our idea is illustrated in Fig. 1a, which shows a schematic of a ferromagnetic Fe film capped by a thin layer of Ru or Au. Absorption of a femtosecond laser pulse (photon energy 1...

Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, that is, the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge-based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In this respect, it is the analogue to the tunnelling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configurations are of the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. The geometric centre of the electronic density of states relative to the Fermi level determines the size of the Seebeck effect. Experimentally, we realized 8.8% magneto-Seebeck effect, which results from a voltage change of about -8.7 μV K⁻¹ from the antiparallel to the parallel direction close to the predicted value of -12.1 μV K⁻¹. In contrast to the spin-Seebeck effect, it can be measured as a voltage change directly without conversion of a spin current.

Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the order of Kelvins across an ultra thin MgO barrier. In this paper, we present results on the fabrication and the characterization of magnetic tunnel junctions with 3 monolayer thin MgO barriers.The quality of the interfaces at different growth conditions is studied quantitatively via high-resolution transmission electron microscopy imaging. We demonstrate tunneling magneto resistance ratios of up to 55% to 64% for 3 to 4 monolayer barrier thickness. Magnetic tunnel junctions with perpendicular magnetization anisotropy show spin-transfer torque switching with a critical current of 0.2 MA/cm 2 . The thermally generated torque is calculated ab initio using the Korringa-Kohn-Rostoker and non-equilibrium Green's function method. Temperature gradients generated from femtosecond laser pulses were simulated using COMSOL, revealing gradients of 20 K enabling thermal spin-transfer-torque switching.

Thermoelectric effects in magnetic tunnel junctions are promising to serve as the basis for logic devices or memories in a ”green” information technology. However, up to now the readout contrast achieved with Seebeck effects was magnitudes smaller compared to the well-established tunnel magnetoresistance effect. Here, we resolve this problem by demonstrating that the tunnel magneto-Seebeck effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic “1” state and off to “0” by simply changing the magnetic state of the CoFeB electrodes. This new functionality is achieved by combining a thermal gradient and an electric field. Our results show that the signal crosses zero and can be adjusted by tuning a bias voltage that is applied between the electrodes of the junction; hence, the name of the effect is bias-enhanced tunnel magneto-Seebeck effect (bTMS). Via the spin- and energy-dependent transmission of electrons in the junction, the bTMS effect can be configured using the bias voltage with much higher control than the tunnel magnetoresistance and even completely suppressed for only one magnetic configuration. Moreover, our measurements are a step towards the experimental realization of high TMS ratios without additional bias voltage, which are predicted for specific Co-Fe compositions.