The Cross‐Track Infrared Sounder (CrIS) is a Fourier Transform Michelson interferometer instrument launched on board the Suomi National Polar‐Orbiting Partnership (Suomi NPP) satellite on 28 October 2011. CrIS provides measurements of Earth view interferograms in three infrared spectral bands at 30 cross‐track positions, each with a 3 × 3 array of field of views. The CrIS ground processing software transforms the measured interferograms into calibrated and geolocated spectra in the form of Sensor Data Records (SDRs) that cover spectral bands from 650 to 1095 cm−1, 1210 to 1750 cm−1, and 2155 to 2550 cm−1 with spectral resolutions of 0.625 cm−1, 1.25 cm−1, and 2.5 cm−1, respectively. During the time since launch a team of subject matter experts from government, academia, and industry has been engaged in postlaunch CrIS calibration and validation activities. The CrIS SDR product is defined by three validation stages: Beta, Provisional, and Validated. The product reached Beta and Provisional validation stages on 19 April 2012 and 31 January 2013, respectively. For Beta and Provisional SDR data, the estimated absolute spectral calibration uncertainty is less than 3 ppm in the long‐wave and midwave bands, and the estimated 3 sigma radiometric uncertainty for all Earth scenes is less than 0.3 K in the long‐wave band and less than 0.2 K in the midwave and short‐wave bands. The geolocation uncertainty for near nadir pixels is less than 0.4 km in the cross‐track and in‐track directions.

The Cross‐track Infrared Sounder (CrIS) is a spaceborne Fourier transform spectrometer (FTS) that was launched into orbit on 28 October 2011 onboard the Suomi National Polar‐orbiting Partnership satellite. CrIS is a sophisticated sounding sensor that accurately measures upwelling infrared radiance at high spectral resolution. Data obtained from this sensor are used for atmospheric profiles retrieval and assimilation by numerical weather prediction models. Optimum vertical sounding resolution is achieved with high spectral resolution and multiple spectral channels; however, this can lead to increased noise. The CrIS instrument is designed to overcome this problem. Noise Equivalent Differential Radiance (NEdN) is one of the key parameters of the Sensor Data Record product. The CrIS on‐orbit NEdN surpasses mission requirements with margin and has comparable or better performance when compared to heritage hyperspectral sensors currently on orbit. This paper describes CrIS noise performance through the characterization of the sensor's NEdN and compares it to calibration data obtained during ground test. In addition, since FTS sensors can be affected by vibration that leads to spectrally correlated noise on top of the random noise inherent to infrared detectors, this paper also characterizes the CrIS NEdN with respect to the correlated noise contribution to the total NEdN. Lastly, the noise estimated from the imaginary part of the complex FTS spectra is extremely useful to assess and monitor in‐flight FTS sensor health. Preliminary results on the imaginary spectra noise analysis are also presented.

Quantification of dopant profiles in two dimensions (2D) for p-n junctions has proven to be a challenging problem. The scanning capacitance microscope (SCM) capability for p-n junction imaging has only been qualitatively demonstrated. No well-established physical model exists yet for the SCM data interpretation near the p-n junction. In this work, the experimental technique and conversion algorithm developed for nonjunction samples are applied to p-n junction quantification. To understand the SCM response in the active p-n junction region, an electrical model of the junction is proposed. Using one-dimensional secondary ion mass spectrometry (SIMS) data, the carrier distribution in the vertical dimension is calculated. The SIMS profile and carrier distribution is then compared with the SCM data converted using a first-order model. It is shown that for a certain class of profiles, the SCM converted dopant profile fits well to the SIMS data in one dimension. Under this condition, it is possible to identify the metallurgical p-n junction position in two dimensions. Examples of 2D metallurgical p-n junction delineation are presented. In addition, the SCM ability to locate the 2D position of the intrinsic point in the p-n junction depletion region is demonstrated. The SCM probe tip size is found to be a major factor limiting the SCM accuracy on shallow profiles. On junctions with shallow profiles, the SCM tip interacts with carriers on both sides of the junction. As a consequence, a decrease in accuracy and spatial resolution is observed using a first-order conversion algorithm.

Several advances have been made toward the achievement of quantitative two-dimensional dopant and carrier profiling. To improve the dielectric and charge properties of the oxide–silicon interface, a method of low temperature heat treatment has been developed which produces an insulating layer with consistent quality and reproducibility. After a standard polishing procedure is applied to cross-sectional samples, the samples are heated to 300 °C for 30 min under ultraviolet illumination. This additional surface treatment dramatically improves dielectric layer uniformity, scanning capacitance microscopy (SCM) signal to noise ratio, and C–V curve flat band offset. Examples of the improvement in the surface quality and comparisons of converted SCM data with secondary ion mass spectrometry (SIMS) data are shown. A SCM tip study has also been performed that indicates significant tip depletion problems can occur. It is shown that doped silicon tips are often depleted by the applied SCM bias voltage causing errors in the SCM measured profile. Worn metal coated and silicided silicon tips also can cause similar problems. When these effects are tested for and eliminated, excellent agreement can be achieved between quantitative SCM profiles and SIMS data over a five-decade range of dopant density using a proper physical model. The impact of the tip size and shape on SCM spatial accuracy is simulated. A flat tip model gives a good agreement with experimental data. It is found that the dc offset used to compensate the C–V curve flat band shift has a consistently opposite sign on p- and n-type substrates. This corresponds to a positive surface on p-type silicon and to a negative surface on n-type silicon. Rectification of the large capacitance probing voltage is considered as a mechanism responsible for the apparent flat band shift of (0.4–1) V measured on the samples after heating under UV irradiation. To explain the larger flat band shift of (1–5) V, tip induced charging of water-related traps is proposed and discussed.

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