The state‐of‐the‐art magnetic tunnel junction, a cornerstone of spintronic devices and circuits, uses a magnesium oxide tunnel barrier that provides a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide‐iron systems increases the resistance‐area product and creates variability and breakdown challenges. Here, the authors study using first principles narrower‐bandgap scandium nitride (ScN) transport properties in magnetoresistive junctions in comparison to magnesium oxide. The results show a high magnetoresistance in Fe/ScN/Fe via Δ1 and normalΔ2′ symmetry filtering with low wave function decay rates, suggesting scandium nitride could be a new barrier material for spintronic devices.
Large Magnetoresistance in Scandium Nitride Magnetic Tunnel Junctions
Theory and simulation are essential to discovering new materials for computing. In article number 2100309, Jean Anne Incorvia, Suyogya Karki, Vivian Rogers, and co‐workers identify scandium nitride as a tunnel barrier material and compare its properties to state‐of‐the‐art magnesium oxide. The results show a high magnetoresistance with low wavefunction decay rates, suggesting scandium nitride could be used for magnetic tunnel junction‐based spintronic devices.
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