The PC1D simulation aand origin software were successfully used for the study of Carrier Lifetime and Temperature effect on InGaN Single-Junction Solar Cell. For the simulation, the total device area was 100 cm2, dielectric constant 13.1, band gap 1.35eV, intrinsic constant is 1×1010 cm-3, doping concentration is 1×1017 cm-3, electron number and hole number 1000 and 170 respectively, and the refractive index was 3.58. The optimized temperature and bulk recombination were 25°C and 1000μs respectively along with the efficiency of 18.258 % for both n and p - InGaN solar cell. Several graphs were plotted under the following conditions: a) bulk recombination time of p-InGaN and temperature are kept constant at 1000 μs and 25°C, the variation of bulk recombination time of n - type InGaN solar cell with base current and voltage, maximum current and voltage, and efficiency and maximum power were studied. b) bulk recombination time of n-InGaN and temperature are kept constant at 1000 μs and 25°C, the variation of bulk recombination time of p - type InGaN solar cell with base current and voltage, maximum current and voltage, and efficiency and maximum power were studied.
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