The sensing performance of chemical sensors can be achieved not only by modification or hybridization of sensing materials but also through new design in device geometry. The performance of a chemical sensing device can be enhenced from a simple three‐dimensional (3D) chemiresistor‐based gas sensor platform with an increased surface area by forming networked, self‐assembled reduced graphene oxide (R‐GO) nanosheets on 3D SU8 micro‐pillar arrays. The 3D R‐GO sensor is highly responsive to low concentration of ammonia (NH3) and nitrogen dioxide (NO2) diluted in dry air at room temperature. Compared to the two‐dimensional planar R‐GO sensor structure, as the result of the increase in sensing area and interaction cross‐section of R‐GO on the same device area, the 3D R‐GO gas sensors show improved sensing performance with faster response (about 2%/s exposure), higher sensitivity, and even a possibly lower limit of detection towards NH3 at room temperature.

Ultraviolet (UV) photodetectors based on ZnO nanostructure/graphene (Gr) hybrid-channel field-effect transistors (FETs) are investigated under illumination at various incident photon intensities and wavelengths. The time-dependent behaviors of hybrid-channel FETs reveal a high sensitivity and selectivity toward the near-UV region at the wavelength of 365 nm. The devices can operate at low voltage and show excellent selectivity, high responsivity (RI ), and high photoconductive gain (G). The change in the transfer characteristics of hybrid-channel FETs under UV light illumination allows to detect both photovoltage and photocurrent. The shift of the Dirac point (V Dirac ) observed during UV exposure leads to a clearer explanation of the response mechanism and carrier transport properties of Gr, and this phenomenon permits the calculation of electron concentration per UV power density transferred from ZnO nanorods and ZnO nanoparticles to Gr, which is 9 × 10(10) and 4 × 10(10) per mW, respectively. The maximum values of RI and G infer from the fitted curves of RI and G versus UV intensity are 3 × 10(5) A W(-1) and 10(6) , respectively. Therefore, the hybrid-channel FETs studied herein can be used as UV sensing devices with high performance and low power consumption, opening up new opportunities for future optoelectronic devices.

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A flexible ultraviolet (UV) photodetector based on ZnO nanorods (NRs) as nanostructure sensing materials integrated into a graphene (Gr) field-effect transistor (FET) platform is investigated with high performance. Based on the negative shift of the Dirac point (VDirac) in the transfer characteristics of a phototransistor, high-photovoltage responsivity (RV) is calculated with a maximum value of 3 × 10(8) V W(-1). The peak response at a wavelength of ∼365 nm indicated excellent selectivity to UV light. The phototransistor also allowed investigation of the photocurrent responsivity (RI) and photoconductive gain (G) at various gate voltages, with maximum values of 2.5 × 10(6) A W(-1) and 8.3 × 10(6), respectively, at a gate bias of 5 V. The UV response under bending conditions was virtually unaffected and was unchanged after 10,000 bending cycles at a bending radius of 12 mm, subject to a strain of 0.5%. The attributes of high stability, selectivity, and sensitivity of this flexible UV photodetector based on a ZnO NRs/Gr hybrid FET indicate promising potential for future flexible optoelectronic devices.

Flexible chemical sensors utilizing chemically sensitive nanomaterials are of great interest for wearable sensing applications. However, obtaining high performance flexible chemical sensors with high sensitivity, fast response, transparency, stability, and workability at ambient conditions is still challenging. Herein, a newly designed flexible and transparent chemical sensor of reduced graphene oxide (R‐GO) coupled with organic dye molecules (bromophenol blue) is introduced. This device has promising properties such as high mechanical flexibility (>5000 bending cycles with a bending radius of 0.95 cm) and optical transparency (>60% in the visible region). Furthermore, stacking the water‐trapping dye layer on R‐GO enables a higher response as well as workability in a large relative humidity range (up to 80%), and dual‐mode detection capabilities of colorimetric and electrical sensing for NH3 gas (5–40 ppm). These advantageous attributes of the flexible and transparent R‐GO sensor coupled with organic dye molecules provide great potential for real‐time monitoring of toxic gas/vapor in future practical chemical sensing at room conditions in wearable electronics.

As the push towards exascale hardware has increased the diversity of system architectures, performance portability has become a critical aspect for scientific software. We describe the Kokkos Performance Portable Programming Model that allows developers to write single source applications for diverse high-performance computing architectures. Kokkos provides key abstractions for both the compute and memory hierarchy of modern hardware. We describe the novel abstractions that have been added to Kokkos version 3 such as hierarchical parallelism, containers, task graphs, and arbitrary-sized atomic operations to prepare for exascale era architectures. We demonstrate the performance of these new features with reproducible benchmarks on CPUs and GPUs.

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Omnidirectionally stretchable photodetectors are limited by difficulties in designing material and fabrication processes that enable stretchability in multiaxial directions. Here, we propose a new approach involving an organic-inorganic p-n heterojunction photodetector comprised of free-standing ZnO nanorods grown on a poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate transport layer coated on a three-dimensional micropatterned stretchable substrate containing bumps and valleys. This structure allows for efficient absorption of stretching strain. This approach allows the device to accommodate large tensile strain in all of the directions. The device behaves as a photogated p-n heterojunction photodetector in which current modulation was obtained by sensing the mechanisms that rely on photovoltage and photogating effects. The device exhibits a high photoresponse to UV light and reliable electrical performance under applied stretching in uniaxial and omniaxial directions. Furthermore, the device can be easily and conformally attached to a human wrist. This allowed us to investigate the response of the device to UV light during human activity.