Formation of Kirkendall voids is demonstrated in the Ge underlayer of reverse step graded Si 1−x Ge x /Ge buffer layers grown on Si(001) using reduced pressure chemical vapour deposition (RP-CVD). This phenomenon is seen when the constant composition Si 1−x Ge x layer is grown at high temperatures and for x0.7. The density and size of the spherical voids can be tuned by changing Ge content in the Si 1−x Ge x and other growth parameters.
Reverse terrace graded (RTG) relaxed buffer layers grown on Si(001) substrates that are oriented on-axis and off-axis (6 o toward the [110] direction) show similar levels of strain, surface roughness and threading dislocation density (TDD) to Ge and epilayers of similar thickness and Ge content. For identical growth conditions and times, a reduced growth rate is observed for buffer layers on off-axis substrates; which leads to thinner layers. The findings in this article contradict previous reports for relaxed Ge buffer layers grown on 6° off-axis Si(001) substrates [1].
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