The influence of shallow background donor impurities on the energy characteristics of the SiGe/ Si/SiGe quantum well structure with centered delta-doping is studied numerically. The description of the self-consistent method includes the calculation of the donors impurity binding energy in the delta-layer. The delta-layer impurity binding energy as well as the energy differences between the first quantized electron subbands in the well demonstrate a significant dependence on the characteristics of the background doping. Therefore, the background doping cannot be neglected when studying phenomena like intersubband optical transitions.
The relevant problem is searching for up-to-date methods to improve tools and machine parts’ performance due to the hardening of surface layers. This article shows that, after the magnetic-pulse treatment of bearing steel Cr15, its surface microhardness was increased by 40–50% compared to baseline. In this case, the depth of the hardened layer was 0.08–0.1 mm. The magnetic-pulse processing of hard alloys reduces the coefficient of microhardness variation from 0.13 to 0.06. A decrease in the coefficient of variation of wear resistance from 0.48 to 0.27 indicates the increased stability of physical and mechanical properties. The nitriding of alloy steels was accelerated 10-fold that of traditional gas upon receipt of the hardened layer depth of 0.3–0.5 mm. As a result, the surface hardness was increased to 12.7 GPa. Boriding in the nano-dispersed powder was accelerated 2–3-fold compared to existing technologies while ensuring surface hardness up to 21–23 GPa with a boride layer thickness of up to 0.073 mm. Experimental data showed that the cutting tool equipped with inserts from WC92Co8 and WC79TiC15 has a resistance relative to the untreated WC92Co8 higher by 183% and WC85TiC6Co9—than 200%. Depending on alloy steel, nitriding allowed us to raise wear resistance by 120–177%, boriding—by 180–340%, and magneto-pulse treatment—by more than 183–200%.
This is the second part of our study of the background impurity influence on the intersubband energy structure of a single SiGe/Si/SiGe quantum well with the impurity delta layer within the well. By the background impurity we mean sparse shallow donor doping throughout the infinitely wide barriers. In this part we consider a situation where the delta layer is positioned near the edge of the well and the structure symmetry is broken. We explain in detail the necessary modifications of our self-consistent method that includes calculation of impurity binding energy. The results particularly show that the mentioned asymmetry combined with the background impurity in the barriers provides new features to the effect of tuning the intersubband optical transitions by the ionization grade of the impurity in delta-layer that provides new technological possibilities.
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