We theoretically investigate microwave transmission through a zero-index metamaterial loaded with dielectric defects. The metamaterial is impedance matched to free space, with the permittivity and permeability tending towards zero over a given frequency range. By simply varying the radii and permittivities of the defects, total transmission or reflection of the impinging electromagnetic wave can be achieved. The proposed defect structure can offer advances in shielding or cloaking technologies without restricting the object's viewpoint. Active control of the observed exotic transmission and reflection signatures can occur by incorporating tunable refractive index materials such as liquid crystals and BaSrTiO3.

Hexagonal boron nitride (hBN), which is a 2D layered dielectric material, sometimes referred as “white graphene” due to its structural similarity with graphene, has attracted much attention due to its fascinating physical properties. Here, for the first time the use of chemical vapor deposition ‐grown hBN films to fabricate ultrathin (≈3 nm) flexible hBN‐based resistive switching memory device is reported, and the switching mechanism through conductive atomic force microscopy and ex situ transmission electron microscopy is studied. The hBN‐based resistive memory exhibits reproducible switching endurance, long retention time, and the capability to operate under extreme bending conditions. Contrary to the conventional electrochemical metallization theory, the conductive filament is found to commence its growth from the anode to cathode. This work provides an important step for broadening and deepening the understanding on the switching mechanism in filament‐based resistive memories and propels the 2D material application in the resistive memory in future computing systems.

Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 10 s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.

Transparent nonvolatile memory has great potential in integrated transparent electronics. Here, we present highly transparent resistive switching memory using stoichiometric WO film produced by cathodic electrodeposition with indium tin oxide electrodes. The memory device demonstrates good optical transmittance, excellent operative uniformity, low operating voltages (+0.25 V/-0.42 V), and long retention time (>10 s). Conductive atomic force microscopy, ex situ transmission electron microscopy, and X-ray photoelectron spectroscopy experiments directly confirm that the resistive switching effects occur due to the electric field-induced formation and annihilation of the tungsten-rich conductive channel between two electrodes. Information on the physical and chemical nature of conductive filaments offers insightful design strategies for resistive switching memories with excellent performances. Moreover, we demonstrate the promising applicability of the cathodic electrodeposition method for future resistive memory devices.

Polyaniline (PANI), a promising conducting polymer for supercapacitor, exhibits high specific capacitance and good rate capability. However, it suffers from low cycling stability due to the breakage or scission of polymer chains and loss of contact caused by the volume change during the charge–discharge, as well as the irreversible oxidation and reduction. Here, a strategy for using aniline tetramers loaded on graphene oxide (AT‐GO) is developed to prevent chain breaking and increase the tolerance of volume change. The potential window is also controlled to reduce the irreversible reactions. In a three electrode test, AT‐GO exhibits a good cycling stability with specific capacitance remaining more than 93 to 96% after 2000 cycles. In a two electrode test, the specific capacitance remains 97.7% of its initial specific capacitance after 2000 cycles by suppressing the side reactions. AT‐GO also shows a high specific capacitance of more than 769 F g−1 at 1 A g−1 and it remains 581 F g−1 at 60 A g−1, suggesting a good rate capability. These results suggest that AT‐GO is a promising electrode material for practical applications.