This paper describes a method to control the quantum confinement, and therefore the energy, of excitonic holes in CdSe QDs through adsorption of the hole-delocalizing ligand phenyldithiocarbamate, PTC, and para substitutions of the phenyl ring of this ligand with electron-donating or -withdrawing groups. These substitutions control hole delocalization in the QDs through the energetic alignment of the highest occupied orbitals of PTC with the highest density-of-states region of the CdSe valence band, to which PTC couples selectively.

This paper describes unprecedented bathochromic shifts (up to 970 meV) of the optical band gaps of CdS, CdSe, and PbS quantum dots (QDs) upon adsorption of an organic ligand, phenyldithiocarbamate (PTC), and the use of PTC to map the quantum confinement of specific charge carriers within the QDs as a function of their radius. For a given QD material and physical radius, R, the magnitude of the increase in apparent excitonic radius (ΔR) upon delocalization by PTC directly reflects the degree of quantum confinement of one or both charge carriers. The plots of ΔR vs R for CdSe and CdS show that exciton delocalization by PTC occurs specifically through the excitonic hole. Furthermore, the plot for CdSe, which spans a range of R over multiple confinement regimes for the hole, identifies the radius (R∼1.9 nm) at which the hole transitions between regimes of strong and intermediate confinement. This demonstration of ligand-induced delocalization of a specific charge carrier is a first step toward eliminating current-limiting resistive interfaces at organic-inorganic junctions within solid-state hybrid devices. Facilitating carrier-specific electronic coupling across heterogeneous interfaces is especially important for nanostructured devices, which comprise a high density of such interfaces.

A study of the adsorption equilibrium of solution-phase CdS quantum dots (QDs) and acid-derivatized viologen ligands (N-[1-heptyl],N'-[3-carboxypropyl]-4,4'-bipyridinium dihexafluorophosphate, V(2+)) reveals that the structure of the surfaces of the QDs depends on their concentration. This adsorption equilibrium is monitored through quenching of the photoluminescence of the QDs by V(2+) upon photoinduced electron transfer. When modeled with a simple Langmuir isotherm, the equilibrium constant for QD-V(2+) adsorption, K(a), increases from 6.7 × 10(5) to 8.6 × 10(6) M(-1) upon decreasing the absolute concentration of the QDs from 1.4 × 10(-6) to 5.1 × 10(-8) M. The apparent increase in K(a) upon dilution results from an increase in the mean number of available adsorption sites per QD from 1.1 (for [QD] = 1.4 × 10(-6) M) to 37 (for [QD] = 5.1 × 10(-8) M) through desorption of native ligands from the surfaces of the QDs and through disaggregation of soluble QD clusters. A new model based on the Langmuir isotherm that treats both the number of adsorbed ligands per QD and the number of available binding sites per QD as binomially distributed quantities is described. This model yields a concentration-independent value for K(a) of 8.7 × 10(5) M(-1) for the QD-V(2+) system and provides a convenient means for quantitative analysis of QD-ligand adsorption in the presence of competing surface processes.

This Perspective describes the mechanisms by which organic surfactants, in particular, phenyldithiocarbamates (PTCs), couple electronically to the delocalized states of semiconductor quantum dots (QDs). This coupling reduces the confinement energies of excitonic carriers and, in the case of PTC, the optical band gap of metal chalcogenide QDs by up to 1 eV by selectively delocalizing the excitonic hole. The reduction of confinement energy for the hole is enabled by the creation of interfacial electronic states near the valence band edge of the QD. The PTC case illuminates the general minimal requirements for surfactants to achieve observable bathochromic or hypsochromic shifts of the optical band gap of QDs; these include frontier orbitals with energies near the relevant semiconductor band edge, the correct symmetry to mix with the orbitals of the relevant band, and an adsorption geometry that permits spatial overlap between the orbitals of the ligand and those of the relevant band (Se 4p orbitals for CdSe, for example). The shift is enhanced by energetic resonance of frontier orbitals of the surfactant with a high density of states region of the band, which, for CdSe, is ∼1 eV below the band edge. The Perspective discusses other examples of strong-coupling surfactants and compares the orbital mixing mechanism with other mechanisms of surfactant-induced shifts in the QD band gap.

This paper describes the enhancement of the quantum yield of photoluminescence (PL) of CdSe quantum dots (QDs) upon the adsorption of an exciton-delocalizing ligand, phenyldithiocarbamate. Increasing the apparent excitonic radius by only 10% increases the value of the radiative rate constant by a factor of 1.8 and the PL quantum yield by a factor of 2.4. Ligand exchange therefore simultaneously perturbs the confinement energy of charge carriers and enhances the probability of band-edge transitions.

Displacement of cadmium oleate (Cd(oleate)2) ligands for the exciton-delocalizing ligand 4-hexylphenyldithiocarbamate (C6-PTC) on the surfaces of CdS quantum dots (QDs) causes a decrease in the band gap (Eg) of the QD of ∼100 meV for QDs with a radius of 1.9 nm and ∼50 meV for QDs with a radius of 2.5 nm. The primary mechanism of this decrease in band gap, deduced in previous work, is a decrease in the confinement barrier for the excitonic hole. The increase in apparent excitonic radius of the QD that corresponds to this decrease in Eg is denoted ΔR. The dependence of ΔR on the surface coverage of C6-PTC, measured by (1)H NMR spectroscopy, appears to be nonlinear. Calculations of the excitonic energy of a CdS QD upon displacement of native insulating ligands with exciton-delocalizing ligands using a 3D spherical potential well model show that this response includes the contributions to ΔR from both isolated, bound C6-PTC ligands and groups of adjacent C6-PTC ligands. Fits to the experimental plots of ΔR vs surface coverage of C6-PTC with a statistical model that includes the probability of formation of clusters of bound C6-PTC on the QD surface allow for the extraction of the height of the confinement barrier presented by a single, isolated C6-PTC molecule to the excitonic hole. This barrier height is less than 0.6 eV for QDs with a radius of 1.9 nm and between 0.6 and 1.2 eV for QDs with a radius of 2.5 nm.

Displacement of native octylphosphonate (OPA) ligands for methylthiophenolate (CH 3 -TP) on the surfaces of CdSe quantum dots (QDs) causes a moderate (up to 50 meV) decrease in the band gap (E g ) of the QD. Plots of the corresponding increase in apparent excitonic radius, ΔR, of the QDs versus the surface coverage of CH 3 -TP, measured by 1 H NMR, for several sizes of QDs reveal that this ligand adsorbs in two distinct binding modes, (1) a tightly bound mode (K a = 1.0 ± 0.3 × 10 4 M −1 ) capable of exciton delocalization, and (2) a more weakly bound mode (K a = 8.3 ± 9.9 × 10 2 M −1 ) that has no discernible effect on exciton confinement. For tightly bound CH 3 -TP, the degree of delocalization induced in the QD is approximately linearly related to the fractional surface area occupied by the ligand for all sizes of QDs. Comparison of the dependence of ΔR on surface coverage of CH 3 -TP over a range of physical radii of the QDs, R = 1.1−2.4 nm, to analogous plots simulated using a 3D spherical potential well model yield a value for the confinement barrier presented to the excitonic hole by tightly bound CH 3 -TP of ∼1 eV. ■ INTRODUCTIONThis paper describes the dependence of the excitonic radius of CdSe quantum dots, QDs, on the surface coverage of an exciton-delocalizing ligand, methylthiophenolate, CH 3 -TP, and the use of this dependence to estimate both the number of binding geometries (with corresponding adsorption constants) for the ligand and the magnitude of the confinement potential that each binding mode presents for the exciton. Exciton delocalizing ligands, such as thiolates 1−4 and dithiocarbamates, 5−8 allow for increased electronic coupling of a quantum-confined exciton with the immediate surroundings of the QD, and therefore facilitate charge carrier or exciton extraction into proximate redox or energy acceptors, without changing the physical size or chemical composition of the QD core or broadening their optical spectra. 5−9 Exciton delocalization is also associated with an increase in the oscillator strength of band-edge transitions 3,4 and a resultant increase in the photoluminescence quantum yield of ensembles of QDs. 10 In addition to the benefits of delocalizing ligands for use of QDs as photovoltaic active materials, photocatalysts, and luminescent tags, the response of the excitonic energy of the QD to its surface chemistry is a sensitive probe of the degree of quantum confinement of its carriers, 6,8 and, as we show here, the chemical and electronic structure of the QD−ligand interface, which is often difficult to probe using traditional analytical techniques, especially in the solution phase.Displacement of native octylphosphonate ligands (OPA) by CH 3 -TP on the surfaces of the QDs, Figure 1A, causes a moderate (up to 50 meV) decrease in the band gap (E g ) of the QDs, which we measure by monitoring the position of the first excitonic peak of the QDs with UV−vis absorption spectroscopy, Figure 1B. We report the decrease in E g as an increase in the apparent radius of its quantum-confine...

Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.