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Samples with doping of Mn (0, 2, and 4%) in ZnFe2O4 were prepared by sol-gel chemical route at 80 o C. X-ray powder diffraction and Raman spectrum analysis were used to determine the preliminary phase of obtained samples. W-H and SSP plots were used to determine the crystallite size and micro-strain of samples. Using zeta potential and scanning electron microscope, the surface charge and morphology of the prepared samples were studied. The optical bandgap of sample suggested that it was semiconducting.The dielectric characteristics of samples were examined as a function of temperature at various frequencies (1 KHz, 10 KHz, 100 KHz, and 1 MHz) (60-600 o C). Dielectric study revealed the presence of interfacial and orientational polarization, with dielectric constants and dissipation factors ranging from (0.7-460) to (0.3-0.8), remain thermally stability up to 300 o C. In samples ZF-0, ZF-2, and ZF-4, the thermal dependence of DC conductivity demonstrates Arrhenius transport with one, two, and three regions of conduction, respectively. The sources of charge carrier in samples were ⋅⋅ , ′ and dipole defects ( ⋅⋅ − 2 2+ 3+ ′ ) and (2 3+ 2+ . − 2 2+ 3+ ′ ). The current work could help identify possible applications in semiconductor devices, thermally stable capacitors, and as mixed ionic electronic conductors in solid oxide fuel cells.

Samples with doping of Mn (0, 2, and 4%) in ZnFe2O4 were prepared by sol-gel chemical route at 80oC. X-ray powder diffraction and Raman spectrum analysis were used to determine the preliminary phase of obtained samples. W-H and SSP plots were used to determine the crystallite size and micro-strain of samples. Using zeta potential and scanning electron microscope, the surface charge and morphology of the prepared samples were studied. The optical bandgap of sample suggested that it was semiconducting. The dielectric characteristics of samples were examined as a function of temperature at various frequencies (1 KHz, 10 KHz, 100 KHz, and 1 MHz) (60-600oC). Dielectric study revealed the presence of interfacial and orientational polarization, with dielectric constants and dissipation factors ranging from (0.7–460) to (0.3–0.8), remain thermally stability up to 300oC. In samples ZF-0, ZF-2, and ZF-4, the thermal dependence of DC conductivity demonstrates Arrhenius transport with one, two, and three regions of conduction, respectively. The sources of charge carrier in samples were Vo,e1 defects (Vo - 2FE2+ Fe3+') and (2M3+ Zn2+ - 2FE2+ Fe3+'). The current work could help identify possible applications in semiconductor devices, thermally stable capacitors, and as mixed ionic electronic conductors in solid oxide fuel cells.

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