A technique is presented, by which the magnetic susceptibility | G of the ion core of an anisotropic semiconductor Bi 2 Te 3 -Sb 2 Te 3 crystal is determined from experimental data on the magnetic susceptibility || and obtained with allowance for the orientation of the magnetic field vector H with respect to the trigonal C 3 axis of the crystal in accordance with the expressionIn this expression, the value of the magnetic susceptibility of free charge carriers || eh and eh depending on their effective masses * || m and * m known from the experiment is calculated within the framework of the Pauli and Landau-Peierls approaches. The found value of | G for Bi 2 Te 3 -Sb 2 Te 3 crystals is in good agreement with experimental data, as well as with the estimates obtained in the framework of the Larmor approach explaining, in particular, a linear dependence of the molar magnetic susceptibility on the number of electrons in the molecule observed for a large number of compounds. The proposed technique can be extended to other anisotropic semiconductors.
Solid solutions Bi2Te3-Sb2Te3 continue to be the subject of numerous and versatile experimental studies due to their practical importance for thermoelectric materials science. In this regard, the problem of studying the regularities of changes in the state of the electronic system of these semiconductors from composition and temperature remains urgent. This paper presents the results of studying the temperature dependences of the magnetic susceptibility of Bi2Te3-Sb2Te3 crystals containing 10, 25, 40, 50, 60 mol.% Sb2Te3. The correlation of the behavior of the temperature dependences of the magnetic susceptibility and electrical conductivity is analyzed. Keywords: magnetic susceptibility, diamagnetic susceptibility, temperature dependence of electrical conductivity.
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