Articles you may be interested inStructure and property characterization of low-k dielectric porous thin films determined by x-ray reflectivity and small-angle neutron scattering AIP Conf.
Pseudobinary compounds of column III elements and nitrogen are semiconductors widely studied for optoelectronic applications. Ga1-
x
B
x
N compounds are considered to be prone to phase separation due to the large difference in bond length between B–N and Ga–N. However if a sufficient amount of boron can be incorporated to Ga1-
x
B
x
N compounds, lattice matching with substrates such as SiC, AlN and Ga1-
x
Al
x
N may be achieved. We used molecular beam epitaxy to grow Ga1-
x
B
x
N films on sapphire c faces with various values of x. Single-phase wurtzite Ga1-
x
B
x
N with x up to 4.56% has been obtained.
Abstract— A prototype ballistic electron surface‐emitting display (BSD) was fabricated on a TFT or PDP glass substrate by using a low‐temperature process. A 84 × 63‐pixel, 7.6‐in.‐diagonal full‐color BSD shows excellent performance, comparable to the previously reported 2.6‐in. model. This result demonstrates the strong possibility of large‐panel BSDs.
Ballistic electron Surface-emitting Display (BSD) is successfully fabricated on a glass substrate with low temperature process. 168 (RGB) x 126 pixels, 2.6 inches diagonal full-colour BSD exhibits excellent performance as a flat panel display. Main fabrication process is an anodisation and subsequent electrochemical oxidation process at a low temperature, which will contribute to larger panel size and process-cost reduction.
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