We present the results of comprehensive investigations of the effects of ordering enhanced by magnetron microwave radiation (frequency of 2.45 GHz, irradiance of 1.5 W/cm 2 , and processing duration of 10 s) in Ta 2 O 5 −p-Si heterosystem and MIS structures with Ta 2 O 5 insulator 16-24 nm thick. It was shown that using microwave treatment of investigated samples we can receive practically relaxed heterosystems whose parameters correlate with characteristics of MIS structures. In this case the Ta 2 O 5 /p-Si interface becomes essentially ordered.
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