The first experimental results in investigating the IIE relaxation effect of Ge semiconductor monocrystal when bombarding with accelerated Ar+, Kr' ions are presented. The interpretation of the observed relaxation effect is held within the theory considering a concentration redistribution processes of both the embedded inert gas ions and the interstitial atoms of Ge itself. The comparison of the relaxational change of IIE coefficient to the analogous change of the IEE coefficient is drawn which shows that IIE is more sensible to the lattice structural defects. The analysis of the relaxation curves showed that the dependence of characteristic relaxation times for IIE and IEE on temperature has the activation character. The activation energies and coefficients of diffusion of embedded Ar and Kr atoms and the activation energy of interstitial Ge atoms migration under the conditions of the ion irradiation are determined.
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