Parametric x rays (PXR) produced by bombarding silicon and diamond crystals with electrons of 30 to 87 MeV were detected at 180 degrees relative to the direction of the electron beam. It was found that the dependence of the intensity on the orientation of the crystal agrees with the predictions of the kinematical theory of PXR. The absolute intensity is twice as large as predicted. These findings can be explained considering dynamical effects that govern the x-ray crystal interaction. Additionally, x rays caused by self-diffracted transition radiation have been observed.
Parametric X radiation ͑PXR͒ produced by electrons with an energy of E 0 ϭ4 MeV interacting with the atoms in the ͑220͒ plane of a 20-m silicon and a 55-m diamond crystal and observed at an angle of 44°by a Si͑Li͒ detector has been investigated with respect to the interference with coherent bremsstrahlung ͑CB͒ that originates in the same interaction process between the incoming relativistic electron and the crystal. Since the energy of PXR and CB is identical, contributions of both types of radiation are indistinguishable. The newly derived analytical expressions describe the radiation which consists of a coherent superposition of PXR and CB. For the comparison of the experimental results with the theoretical predictions a Monte Carlo simulation taking into account all effects accompanying the radiation process has been performed. The comparison shows very good agreement between experiment and theory.
It is described the charge-number of pulses-converter, which was successfully applied in the ”Program-apparatus complex for investigation of gamma- and X-rays radiations, generated by relativistic electrons in crystals” [1] at Kharkiv linear electron accelerators. This device is in the condition for high energy electron (positron) beam charge measurements with accuracy 2·10−10 C and current measurements in the range of 10−10...10−8 A.
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