The experimental multiple-shock technique and a computer-code simulation were used for investigations of electrophysical properties of dense molten sodium up to pressures of 230(5) GPa and temperatures up to 8000(600) K. The multiple-shock data show that the resistivity of shocked sodium increases with pressure and temperature up to 270(30) μ cm. This change was interpreted via the pressure-induced metal-semiconductor transition in shocked molten sodium.

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