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The letter presents the investigation of the temperature dependence of the charging mechanism of dielectric layer in radio frequency microelectromechanical system switch. The accumulated charge kinetics are monitored through the transient response of device capacitance when a bias greater than pull-in is applied. The capacitance transient response is shown to follow a stretched exponential law. The “time scale” of the stretched exponential process is found to be thermally activated, with an activation energy that is determined from Arrhenius plot.

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Semi‐insulating (SI) GaAs offers an attractive choice as a room temperature electromagnetic radiation detector, due to the high mean atomic number of the compound, the relatively low radiation ionization energy and high carrier's mobility. Standard detector configuration consists on a metal alloy Ohmic and a rectifying Schottky contact on either side of GaAs substrate. Metallic contacts, upon irradiation, inject fast electrons towards GaAs. These injected electrons provide an excess charge build‐up in the detectors active region. We investigated the contact thickness effect in charge build‐up and the consequent detector photo‐response, upon detectors irradiation by soft X‐ray photons. The secondary electrons induced excess photo‐current was experimentally verified at low bias conditions. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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