Accurate total-energy pseudopotential methods are used to study the structures, binding energies, and local vibrational modes of various models for the Ga-O-Ga defect in GaAs. We find that the previously proposed models, O As ͑an off-centered substitutional oxygen in arsenic vacancy͒ and O I ͑an oxygen atom occupying a tetrahedral interstitial site͒, are inconsistent with experimental data. We introduce a model, (As Ga ) 2 -O As ͑two arsenic antisites and one off-centered substitutional oxygen in arsenic vacancy͒, the properties of which are in excellent agreement with experimental characterizations. ͓S0163-1829͑99͒51648-2͔
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