Computer modelling of a tandem TPV system has been carried out. The monolithic GaSb/lnSaAsSb tandem TPV devices have been designed and fabricated by LPE.
Liquid Phase Epitaxy of Al,Ga,,As-Ga,As HeterostructuresThis paper is concerned with the investigation of the peculiarities of the application of liquid phase epitaxy for obtaining multilayer structures with heterojunctions in the AlAs-GaAs system. Segregational depletion of A1 in liquid and in solid phases is characteristic of this system. It is proved that supercooling of the substrate arid numerous inclusions of A1 allow to decrease this segregational depletion of A1 and to obtain layers of nearly constant composition up to 600 pm in thickness.A new technique of crystallization of structures from a limited volume of melt with the change of solutions by way of compulsory squeezing out of the foregoing solution by the following one is put forward with the view to perfect the planarity of multilayer structures with abrupt heterojunctions and to improve the complete change of solutions on a substrate.The results of the study of various methods of controlling the value arid direction of the A1 concentration gradient are listed.It has been proved that structures with fluent increase of A1 concentration during the crystallization process and also structures with alteration in the gradient direction of A1 concentration may be obtained by way of artificial slowing down or acceleration of the process of mixing up solutions of various compositions.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.