For the first time it is shown, that the correlation in changes of electroluminescence spectrum and a threshold of origin of an acoustic emission in epitaxial lightdiode ntnpstructures GaP0,84s,15 takes place. It is shown, that the density of a direct current of diode determines intensity of discrete acoustic emission, detrusion and redistribution of intensity in maximums of an electroluminescence spectrum, velocity and quantity of a degradation of emissive power.
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