By using the Faraday method and complex of electro-physical studies (Hall effect, ESR, etc.) the features of magnetic susceptibility (χ) of p-Si(B) crystals grown in "vacancy" regime and annealed at 450 °C are studied. It is demonstrated that the presence of deep thermodonors with the ionization energy Е і ≥ 200 meV in these samples contributes to the appearance of a paramagnetic constituent with the magnetic susceptibility (χ par ) even at 300 K. χ par in this material does not depend on temperature in the range of 77 -300 K that can testify on the Van-Fleck origin of this magnetic susceptibility component. Absence of nonlinearities in the dependence χ(H) within the interval 0.3-4 kOe shows uncooperative character of magnetism found out.
Presented in this paper are experimental results of ultrasound treatment (UST) and dynamic ultrasound loading (USL) influences on the electric activity of radiation defects (after -irradiation) in crystals n-Si-Fz. The results are obtained using the Hall effect method within the temperature range 100-300 K. Peculiarities of US action in the treatment and loading modes on the temperature hysteresis of electrophysical characteristics in investigated material (extension and narrowing) were analyzed. Diffusion and deformation mechanisms responsible for US modification of defect complexes have been suggested.
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