A general theory of Raman scattering (RS) by polaritons in anisotropic crystals with an arbitrary number of phonon branches is developed. A classification of possible scattering variants is given for both uniaxial and cubic crystals. Pormulas defining the angular dependence of the integral intensity and scattering line shape are obtained. Some possible ways of determining the ratios of electronic-ionic and pure electronic contribution to the RS intensity are discussed. The scattering intensity by longitudinal phonon is also investigated.Fur eine beliebige Anzahl von Phononenzmeigen wird eine allgemeine Theorie der Rarnanstreuung (RS) an Polaritonen in anisotropen Krista,llen ausgearbeitet. Eine Klassifikation aller moglichen Streuvarianten in einachsigen und kubischen Kristallen wird angegeben. Es werden Beziehungen fur die Winkelabhangigkeit der integralen Intensitat und der Streulinien gefiinden. Die Bestimmungsmoglichkeiten der Verhaltnisse der Elektronen-IonenAnteile zum reinen Elektronenanteil in der Intensitat der RS werden erortert. Die Streuintensitiit bei RS an longitudinalen Phononen wird ebenfalls untersucht.
On the base of a general theory of Raman scattering (RS) by polaritons, previously developed by the authors, polariton RS in CdS and LiNbO3 crystals was calculated at scattering radiation with λ1 = 5145 Å and λ1 = 4880 Å, respectively. The angular dependences of RS line integral intensities and besides this for CdS the scattering line shapes were calculated. It is shown in particular that in the CdS scattering spectrum at small angles the auxiliary low‐frequency “photon‐like” line consisting of two similar components should appear besides the usual “phonon‐like” line. In LiNbO3 some scattering variants are studied at the excitation of nine phonon branches of E‐type and of four branches of AI‐type.
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