Polycrystalline LiNbO 3 films with random orientation of grains on (001)Si substrates have been grown by RF magnetron sputtering method. Electrical conductance of the formed (001)Si-LiNbO 3 heterostructures is defined through hopping mechanism by charge localization centers (CLC) in the band gap of LiNbO 3 with concentration N t = 2.3 9 10 24 m -3 . Analysis of the impedance frequency spectrum has disclosed two relaxation processes of Maxwell-Wagner type with relaxation times s 1 = 0.1 s and s 2 = 1 9 10 -4 s. Thermal annealing at T = 650°C leads to an increase in the average grain size from 50 to 95 nm; it also leads to a decrease in the CLC concentration down to N t = 2.8 9 10 20 m -3 . Electrical conductance of (001)Si-LiNbO 3 heterostructures after thermal annealing is determined by space charge limited conduction mechanism. There have been defined parameters of dielectric hysteresis loops. It has been demonstrated that thermal annealing leads to a decrease in values of remanent polarization and coercive field.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.