A new method for the investigation of deep centres in piezosemiconductors via internal friction measurements is discussed. The method called deep level electro‐mechanical resonance (DLEMR) is based on the piezoelectric coupling of a charge relaxation influenced by the deep centres with the mechanical non‐elasticity measured and seems to be an approximate, unexpensive and non‐destructive tool for probing high‐resistive materials and hidden layers. Possibilities of an interpretation of the observed relaxation time which is shown to be neither the Maxwell time of dielectric relaxation nor the carrier thermal emission time from the deep centres are discussed.
Internal friction results obtained in thin SnO2 films produced by reactive magnetron
sputtering (thickness of the film ~ 1 μm) and by the dehydration of water solution of tin salts
(thickness of the film ~ 10 μm) are reported. It is suggested that internal friction peak observed in
SnO2 films at around 170 oC is caused by relaxation processes on grain boundaries (average grain
size is 20 nm). The investigation of internal friction in SnO2 films can yield new information about
the structure of thin films.
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