Die Kristallisation der MGe‐Phasen wurde in den Systemen Hf‐Ge, Co‐Ge und Rh‐Ge bei Drücken bis zu 7.7 GPa zwischen 500 und 1350°C untersucht (M = Übergangsmetall).
The results of the rapid quenching from the melt of the pure metals (In, Pb) at high pressures 0.7-8.0 GPa with a cooling rate ~ 103 K s−1 are presented. The supercooling of the melt was measured, and the high pressure influence on the basic parameters of the solidification process are analysed. The short-range order (SRO) structure of the amorphous alloy Cu0.85 Sn0.15 was investigated, and the radial distribution function (RDF) was calculated.It was shown that at certain (P-T) conditions some tetrahedrally bonded semiconductors can be produced in the amorphous (GaSb) or partially amorphous (ZnSe) state. For amorphous gallium antimonide (a-GaSb) Raman spectra, temperature, heat of crystallization and SRO structure were investigated.From the theoretical and experimental data one can conclude that a rapid quenching from the melt under high pressure results in a drastic disordering of the structure of the materials or even an amorphization.
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