The template synthesis is used to produce powders and films based on naphthalocyanines and the corresponding metal complexes (Pc, CuPc, and NiPc). The atomic force microscopy (AFM) and X ray phase analysis (XPA) are employed in the study of structure and phase of fine powders and nanostructured films. The AFM data are used to determine the orientation and density of primary particles packed in the film. The XPA method is used to study the chemical composition and crystal structure of the synthesized samples. The regularities related to the structural features that affect the electrophysical properties of the films under study are revealed.
The structural and photoinduced properties of silicon nanoparticles obtained by plasmachemical and electrolytic techniques and the nickel particles deposited on aluminum oxide film in ultra-high vacuum are investigated by Auger electron spectroscopy, transmission electron microscopy, Fourier-transform infrared spectroscopy and time-of-flight spectroscopy. It is found that substantial increase of silicon nanoparticle photoinduced luminescence can be attributed to particle specific structure, as well as to the SiO2thin film which is formed on the nanocrystalline silicon surface. In case of Ni particles deposited on aluminum oxide film at low mean coverage of about 0.04 monolayers, when the film can be viewed as consisting of separated single adsorbed atoms or very small clusters, the photon irradiation by nanosecond pulsed laser leads to NO desorption. At monolayer Ni coverage formed at a substrate temperature of 80 K laser irradiation causes dissociation of NO molecules. Efficiency of this process at the initial stage is notably enhanced compared to that of NO on the bulk Ni (111) crystal. This enhancement can be attributed to the effect of underlying aluminum oxide support.
The structural and optical properties of nanostructured silicon obtained by plasmachemical and electrolytic techniques are presented. For electrolytic etching of silicon electrolyte the chlorine acid was added to standard HF:C 2 H 5 OH electrolyte. It was found that adding of HCl to the electrolyte slows the process of electrochemical etching thus creating conditions for efficient etching and formation of Si-O and Si-H bonds on the formed nanosilicon surface. In the present study the nanosilicon samples were obtained in ultra-high frequency plasmochemical system by means of recondensation of ultradispersed silicon powder in nitrogen flux heated to mean temperature of 3500 K. Morphology of films was found to consist of quantum nanowires of a mean diameter of 2 nm. Results indicating stability of nanosized silicon (NanoSi) under intense laser irradiation are presented. It is demonstrated that substantial increase of NanoSi photoluminescence signal can be attributed to their specific structure, as well as to the SiO 2 thin film formed on the nanocrystalline surface.
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