Profiles of channeled and dechanneled 31P ions in the energy range 30–900 keV have been measured in 〈100〉, 〈111〉, 〈112〉, and 〈110〉 Si. The maximum range, Rmax, of the channeled ions has been determined and used to calculate values of electronic stopping power. The variation of these values with substrate orientation agrees qualitatively with that predicted by the Firsov theory, although the actual values are 2–3 times the Firsov prediction. Dechanneled profiles (450 keV) were measured in 0.3° steps up to 1.2° for all four orientations and in 2° steps up to 10° for the 〈100〉 and 〈111〉 orientations. The effect of tilt direction on the dechanneling was studied. Dechanneling from the 〈111〉, 〈112〉, and 〈110〉 orientations exhibited a marked sensitivity to the direction of tilt. By tilting in an appropriate maximum-dechanneling direction, dechanneling from the 〈100〉 and 〈111〉 orientations was found to be continuous, starting with the 0.3° tilt and saturating for tilts above 4.2°. The projected range, Rp, determined from the fully dechanneled or random distributions, was found to vary almost linearly with energy and has a slope of ∼1.1 μm/MeV.
During a study of the annealing of damage produced by high-dose (1015–1016 ions/cm2) arsenic implantations into Si, a stable high-defect-density structure was observed. It resulted from implantations through thin SiO2 films covering the Si. Formation of the stable defect structure is related to the presence of the SiO2 film during implantation, but not during annealing. Subsequent experiments indicate that knock-on of oxygen by the As ions is not directly responsible for the effect.
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