π-Bond energies in doubly bonded silicon species, H 2 SidX (X ) E 14 H 2 , E 15 H, E 16 ), were determined using G2 and G3 procedures. In addition, the distribution of electron density in the internuclear area between silicon and the element in H 2 SidX and H 3 Si-XH was estimated using quantum-topological approaches AIM (MP2/6-311++G(2d,p)) and ELF (HF/6-311++G(2d,p)). Both parameters, an increase of electron density at the critical point of the silicon-element bond and π-bond energy, appeared to correlate linearly, increasing on going from group 14 to group 16 elements. The contribution of the ion-component to the SidE π-bond energy increases as the negative inductive effect of the element grows, attaining the maximum for silanone.
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