Abstract.-Experimental and theoretical studies of charge transport and hot carrier effects have been made in intrinsic tellurium. Pulse measurements of current-voltage characteristics have shown a negative differential resistance at fields above 3.5 kV/cm. Moving high-field domains were observed by potential probe measurements. The velocity of the domain was 7*10° cm/s. Hydrostatic pressure measurements of threshold field and Hall coefficient were performed at elevated temperatures, which suggest the existence of a second, low mobility conduction band located 0.26 -0.38 eV above the first one. Reasonable agreement was obtained between the measured magnitudes of threshold field and electron mobility and the results of Monte Carlo calculations.
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