In this work, the impact of the diameter on vertical nanowire tunnel field effect transistors is analyzed focusing on the conduction mechanism and analog parameters, considering different conduction regimes. The diameter influence is investigated using experimental and simulation data. The impact of the diameter on the analog parameters is analyzed, considering both weak and strong conduction. For a smaller diameter, the impact of band-to-band tunneling (BTBT) on the device characteristics increases, showing opposite trends for weak and strong conduction. For strong conduction, a degradation of the intrinsic voltage gain occurs for very small diameters, because the device has less available area for the occurrence of tunneling. For weak conduction, the reduction of the diameter increases the BTBT along the channel/source junction without showing this degradation. Index Terms-Analog performance, band-to-band tunneling (BTBT), conduction mechanism, tunnel field effect transistor (TFET). I. INTRODUCTION T UNNEL field effect transistors (TFETs) are devices in which the designed conduction mechanism is the band-to-band tunneling (BTBT) [1]. TFETs are candidate solutions for low-power/low-voltage applications due to their capability to overcome, at room temperature, the theoretical silicon (Si) MOSFET limit of 60 mV/dec for the subthreshold swing [2]-[4].
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.