We report on the development of a nanometer scale strain mapping technique by means of scanning nano-beam electron diffraction. Only recently possible due to fast acquisition with a direct electron detector, this technique allows for strain mapping with a high precision of 0.1% at a lateral resolution of 1 nm for a large field of view reaching up to 1 μm. We demonstrate its application to a technologically relevant strain-engineered GaAs/GaAsP hetero-structure and show that the method can even be applied to highly defected regions with substantial changes in local crystal orientation. Strain maps derived from atomically resolved scanning transmission electron microscopy images were used to validate the accuracy, precision and resolution of this versatile technique.

Two methods on how to obtain the full diffraction information from a sample region and the associated reconstruction of images or diffraction patterns using virtual apertures are demonstrated. In a STEM-based approach, diffraction patterns are recorded for each beam position using a small probe convergence angle. Similarly, a tilt series of TEM dark-field images is acquired. The resulting datasets allow the reconstruction of either electron diffraction patterns, or bright-, dark- or annular dark-field images using virtual apertures. The experimental procedures of both methods are presented in the paper and are applied to a precipitation strengthened and creep deformed ferritic alloy with a complex microstructure. The reconstructed virtual images are compared with conventional TEM images. The major advantage is that arbitrarily shaped virtual apertures generated with image processing software can be designed without facing any physical limitations. In addition, any virtual detector that is specifically designed according to the underlying crystal structure can be created to optimize image contrast.

We report on the development of the dark-field inline electron holography technique and its application to map strain in technologically relevant structures, using as an example the strain-engineered gate channel in a 45 nm metal-oxide semiconductor field-effect transistor structure. We show that this technique combines a large field of view of several micrometers with high precision ͑better than 0.01%͒, high spatial resolution ͑better than 1 nm͒, and very loose experimental requirements not possible with any other technique currently available.

Dark-field inline electron holography and, for comparison, high-resolution transmission electron microscopy are used to investigate the distribution of indium in GaN-based commercial high-efficiency green light-emitting diodes consisting of InGaN multiquantum wells (QWs). Owing to the low electron doses used in inline holography measurements; this technique allows to map the indium distribution without introducing any noticeable electron beam-induced damage which is hardly avoidable in other quantitative transmission electron microscopy methods. Combining the large field of view with a spatial resolution better than 1 nm, we show that the InGaN QWs exhibit random alloy nature without any evidence of nanometer scale gross indium clustering in the whole active region.

Efficient imaging of biomolecules, 2D materials and electromagnetic fields depends on retrieval of the phase of transmitted electrons. We demonstrate a method to measure phase in a scanning transmission electron microscope using a nanofabricated diffraction grating to produce multiple probe beams. The measured phase is more interpretable than phase-contrast scanning transmission electron microscopy techniques without an off-axis reference wave, and the resolution could surpass that of off-axis electron holography. We apply the technique to image nanoparticles, carbon substrates and electric fields. The contrast observed in experiments agrees well with contrast predicted in simulations.