Transmission electron microscopy has been used to investigate precipitation processes in gallium arsenide doped with chromium and Cr2O3. Whatever the doping technique, at concentrations of chromium 4 × 1016 cm−3 the solid solution was observed to contain precipitates which grew, at least partially, due to the migration of substitutional atoms and their transformation into the precipitates. The process is accompanied by generation of vacancies from dislocation loops.
Bei Umsetzungen der tetraäthoxyverbindung (I) in Äthanol zunächst mit HF (Molverhältnis 1:1‐1 : 5) und nachfolgend CsF entstehen Gemische der Cs‐wolframat (II)‐(IV); die Zusammensetzung dieser Gemische hängt von der Menge des eingesetzten HF ab.
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