A series of new alicyclic polymers designed for use as 193 nm photoresist materials has been synthesized and characterized. These resins are based on cycloaliphatic co-and terpolymers of 2-methylpropylbicyclo[2.2.1]hept-5-ene-2-carboxylate (trivial name, carbotert-butoxy norbornene), bicyclo[2.2.1]hept-5-ene-2-carboxylic acid (trivial name, norbornene carboxylic acid), 8-methyl-8-carboxytetracyclo[4,4,0.1, 2,5 1 7,10 ]dodec-3-ene (trivial name, methyl tetracyclododecene carboxylic acid), 5-(hydroxymethyl)-2-norbornene-2-methanol, and maleic anhydride, which were synthesized by free radical, Pd(II)-catalyzed addition, and ringopening metathesis polymerization techniques. The polymers derived from ring-opening metathesis polymerization were hydrogenated to provide another member of this group of materials. The polymers are soluble in common organic solvents and have glass transition temperatures ranging from less than 60°C to higher than 250°C depending on their specific structure and mode of polymerization. The low absorption of these polymers at 193 nm wavelength and their high resistance to reactive ion etching make these attractive candidates for 193 nm resist applications.
An inexpensive microfluidic sweat sensor platform for single-use and continuous biomarker measurements integrated with a synthetic skin for characterization at various sweat rates.
Here the boundaries meet and all contradictions exist side by side.Fyodor Dostoevsky, The Brothers Karamazov Interaction of Radiation with ResistsThe interaction of exposure radiation with amorphous solid films of resists and their constituents leads to distinct photophysical and photochemical processes that in turn underlie the basis of the contrast between the exposed and the unexposed sections of the resist film. A short section of this chapter is therefore devoted to the rudiments of photochemistry and photophysics of amorphous solid resist films. We can only provide here the most basic information required for understanding the subject. 1It is necessary to introduce some terminology here. When the radiationsensitive components of resists-the resins and components-are irradiated, they can absorb the energy and in turn get excited. It is the excited state form of the radiation-sensitive components of the resist that plays the central role in these processes. These excited states of the molecules are identified by their multiplicity (the overall spin of the electrons in that state), by their molecular orbital character (indicating the involvement of p, n, s, or other orbitals in the excitation process), and by their energy in relation to the energy of the ground state. The relevant excited states of a molecule include the singlet S 1 and triplet T 1 , and are typically 1 For a comprehensive treatment of the subject, the reader is referred to these excellent books: A. Reiser,
Photoresist compositions designed for 193 nm lithography were formulated from a series of cycloaliphatic co-and terpolymers of 2-methylpropyl bicyclo[2.2.1]hept-5-ene-2-carboxylate (trivial name, carbo-tert-butoxynorbornene), bicyclo[2.2.1]hept-2-enecarboxylic acid (trivial name, norbornene carboxylic acid), 8-methyl-8-carboxytetracyclo[4,4,0.1, 2,5 1 7,10 ]dodec-3-ene (trivial name, methyltetracyclododecene carboxylic acid), 5-norbornene-2-methanol, and maleic anhydride, which were synthesized by free radical, Pd(II)-catalyzed addition and ringopening metathesis polymerization techniques. The cycloaliphatic polymer backbones provide etch resistance, mechanical properties, and stability to radiation. The lithographic function is provided by carefully tailored pendant groups, which include an acid functionality that is masked by protecting groups that undergo acid-catalyzed thermolysis, as well as polar groups that influence the adhesion, wettability, and dissolution properties of the polymer. The polymers are soluble in common organic solvents and have glass transition temperatures ranging from less than 60 °C to higher than 250 °C depending on the specific structure and mode of polymerization. The polymers are as transparent at 193 nm as the corresponding acrylics. The dry etch resistance of these polymers varies with the formulation, but the polymers etch more slowly than APEX-E, a commercial deep UV photoresist under conditions typically used to pattern polysilicon. Upon exposure and baking, the resists have demonstrated high sensitivities (3-15 mJ/cm 2 ), and 0.16 µm features have been resolved.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.