In this work, we have examined the optical properties of exfoliated graphene on an Si/SiO2 substrate using spectroscopic imaging ellipsometry in the visible range (360–800 nm). Measured spectra were analyzed by an optical model based on the Fresnel coefficient equations. The optical model was supported by correlated Raman and atomic force microscopy measurements. The complex refractive index of graphene was obtained by inversion of the measured ellipsometry data. The Fano line-shape was used to parameterize the optical properties. Measurements were highly reliable due to the numerous advantages of the spectroscopic imaging ellipsometric technique combined with the proper choice of substrate and experimental set-up. Thickness maps of the graphene sample were obtained from spatially resolved imaging ellipsometry spectra with a spot size of 1 μm. The data showed the presence of a water layer on the surface of the sample, and the thickness was mapped showing the distribution of water over graphene in ambient conditions.
Tapping mode atomic force microscopy (AFM) is employed for dynamic plowing lithography of exfoliated graphene on silicon dioxide substrates. The shape of the graphene sheet is determined by the movement of the vibrating AFM probe. There are two possibilities for lithography depending on the applied force. At moderate forces, the AFM tip only deforms the graphene and generates local strain of the order of 0.1%. For sufficiently large forces the AFM tip can hook graphene and then pull it, thus cutting the graphene along the direction of the tip motion. Electrical characterization by AFM based electric force microscopy, Kelvin probe force microscopy and conductive AFM allows us to distinguish between the truly separated islands and those still connected to the surrounding graphene.
In this study, we have examined the effects of transfer residue and sample annealing on the optical properties of chemical vapor deposited graphene, transferred onto a sapphire substrate. The optical absorption of graphene was obtained from point-by-point inversion of spectroscopic ellipsometry measurements in the visible and ultraviolet ranges (250–800 nm). Measured spectra were analyzed by optical models based on the Fresnel coefficient equations. The optical models were supported by correlated Raman, scanning electron microscopy, and atomic force microscopy measurements. The obtained data were phenomenologically described by a Fano model. Our results show that a residue layer left on graphene can significantly increase its optical absorption in the visible range, compared to an annealed sample.
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