The influence of annealing parameters -temperature (Ta) and time (ta) -on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been investigated. The dependence of the transition temperature (TC) on ta marks out two regions. The TC peak behavior, characteristic of the first region, is more pronounced for thick samples, while for the second ('saturated') region the effect of ta is more pronounced for thin samples. A right choice of the passivation medium, growth conditions along with optimal annealing parameters routinely yield TC-values of ∼ 150 K and above, regardless of the thickness of the epilayers.
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