Post‐growth graphene transfer to a variety of host substrates for circuitry fabrication has been among the most popular subjects since its successful development via chemical vapor deposition in the past decade. Fast and reliable evaluation tools for its morphological characteristics are essential for the development of defect‐free transfer protocols. The implementation of conventional techniques, such as Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy in production quality control at an industrial scale is difficult because they are limited to local areas, are time consuming, and their operation is complex. However, through a one‐shot measurement within a few seconds, phase‐shifting interferometry (PSI) successfully scans ≈1 mm2 of transferred graphene with a vertical resolution of ≈0.1 nm. This provides crucial morphological information, such as the surface roughness derived from polymer residues, the thickness of the graphene, and its adhesive strength with respect to the target substrates. Graphene samples transferred via four different methods are evaluated using PSI, Raman spectroscopy, and AFM. Although the thickness of the nanomaterials measured by PSI can be highly sensitive to their refractive indices, PSI is successfully demonstrated to be a powerful tool for investigating the morphological characteristics of the transferred graphene for industrial and research purposes.

In article number 2002854, Un Jeong Kim, Hyungbin Son, and co‐workers use phase‐shifting interferometry to quickly obtain morphological information of atomic‐scale structures on transferred graphene over a large area. The obtained morphological information includes wrinkles, various polymer residues, and tearing/opening of the transferred graphene, and it can be used to evaluate the quality of the transferred graphene, such as the physical integrity, thickness, and adhesive strength to the target substrate.