The study prepared thin film solar cells using hydrogenated microcrystalline silicon (lc-Si:H) by hot-wire chemical vapor deposition (HWCVD). Hydrogen dilution profiling was used to deposit the boron-doped p-layer on the SnO 2 :F substrate. The lc-Si:H solar cell with triple hydrogen dilution grades in the p-layer has a high photoconversion efficiency of 4.5% as a result of the improvement in the electrical and the antireflection properties of the cell. The short circuit current (J sc ) and the open circuit voltage (V oc ) of the solar cell are 19.7 mA/cm 2 and 450 mV, respectively. The graded hydrogen concentration in the p-layer improves the crystallinity and the antireflection of the absorbing layer (intrinsic layer), thereby enhancing the J sc . The high V oc is ascribed to that a high hydrogen dilution ratio may enhance boron doping in the p-layer leading to the improvement of the V oc .
We investigate the performance of a single junction amorphous Si (a-Si) and a-Si/a-Si tandem solar cells fabricated with Inductively Coupled Plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures.High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density. We demonstrate single-junction a-Si solar cells and a-Si/a-Si tandem solar cell with a conversion efficiency of 9.6% and 8.8%, respectively. Highly light-soaking stable high-density plasma-fabricated a-Si and a-SiJa-Si solar cells were demonstrated with photo-induced degradation in conversion-efficiency as low as 7% and 5%, respectively.
We fabricated nano-crystalline Si (nc-Si:H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (l FE) and adjustable threshold voltages (V th). The nc-Si:H channel and source/drain (S/D) of the multilayered TFT were deposited at 375 C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high l FE of 370 cm 2 /V-s, a steep subthreshold slope of 90 mV/decade, and a low V th of À0.64 V. When biased with the double-gate driving mode, the device shows a tunable V th value extending from À1 V up to 2.7 V. V
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